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BSH108,215 - Nexperia

Description: Nexperia BSH108,215 N-channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23

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BSH108,215 Details

  • Manufacturer Part Number:

    BSH108,215

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-236

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT23

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    3

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    1.9 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSH108,215 Frequently Asked Questions (FAQs)

  • A good PCB layout for the BSH108,215 should include a solid ground plane, short and wide traces for the high-frequency signals, and a decoupling capacitor (e.g., 100nF) close to the device. Additionally, keep the input and output traces separate to minimize crosstalk.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source (e.g., 3.3V or 5V) and decouple it with a capacitor (e.g., 100nF). The VCC pin should be connected to a low-impedance source to minimize voltage drops. Also, ensure the input signals are within the recommended voltage range (0.5V to VCC - 0.5V).
  • The maximum allowable power dissipation for the BSH108,215 is 250mW. Ensure that the device is operated within this limit to prevent overheating and damage.
  • To prevent electrostatic discharge (ESD) damage, handle the device by the body or use an anti-static wrist strap. Ensure the PCB design includes ESD protection components (e.g., TVS diodes) and follow proper ESD handling procedures during assembly and testing.
  • The recommended operating temperature range for the BSH108,215 is -40°C to 125°C. Operating the device outside this range may affect its performance and reliability.

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BSH108,215 Overview

Use the download button to access the BSH108,215 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like BSH10, or try a keyword search, such as Small Signal Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Part Image BSH108 NXP Semiconductors

Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image BSH108,215 NXP Semiconductors

Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image BSH108T/R NXP Semiconductors

Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image BSH108 Nexperia

Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image 934055571215 Nexperia

Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

For a full list of alternate parts for BSH108,215, check out Findchips.com