Part Image

BSM50GP60 - Infineon

Description: IGBT Modules 600V 50A PIM

Download BSM50GP60 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
BSM50GP60 - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

BSM50GP60 Details

  • Manufacturer Part Number:

    BSM50GP60

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MODULE

  • Pin Count:

    24

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    70 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    COMPLEX

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X24

  • Number of Elements:

    7

  • Number of Terminals:

    24

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    315 ns

  • Turn-on Time-Nom (ton):

    105 ns

  • VCEsat-Max:

    2.55 V

BSM50GP60 Frequently Asked Questions (FAQs)

  • The maximum allowed voltage imbalance between the DC links is ±10% of the nominal DC voltage. Exceeding this limit may lead to uneven current sharing and reduced module lifetime.
  • Proper thermal management involves ensuring good heat sink contact, using a suitable thermal interface material, and maintaining a maximum junction temperature of 150°C. A heat sink with a thermal resistance of ≤0.5 K/W is recommended.
  • The recommended gate resistor value is between 10 Ω and 20 Ω. A higher value may lead to slower switching times, while a lower value may cause oscillations.
  • Yes, the BSM50GP60 can be used in a parallel configuration, but it's essential to ensure that the modules are matched in terms of electrical characteristics and thermal performance to avoid uneven current sharing.
  • The maximum allowed dv/dt for the BSM50GP60 is 5 kV/μs. Exceeding this limit may lead to faulty operation or even damage to the module.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

BSM50GP60 Overview

Use the download button to access the BSM50GP60 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like BSM50, or try a keyword search, such as IGBTs

Parts related to BSM50GP60

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

BSM50GP60 Alternates

Showing results

Image Part Number Model
Part Image FP50R07N2E4 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel

Part Image FP50R07N2E4BOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel

Part Image BSM50GP60BOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel