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BSS123 - onsemi

Description: Compact Industry Standard SOT-23 Surface Mount Package; 0.17 A, 100 V  RDS(ON) = 6 Ω @ VGS = 10 V  RDS(ON) = 10 Ω @ VGS = 4.5 V; Rugged and Reliable; High Density Cell Design for Extremely Low RDS(ON)

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BSS123 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23
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BSS123 - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23
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BSS123 Details

  • Manufacturer Part Number:

    BSS123

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    1996-09-01

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    0.17 A

  • Drain-source On Resistance-Max:

    10 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.4 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSS123 Frequently Asked Questions (FAQs)

  • The BSS123 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and the source to ground. The drain should be connected to a load or a voltage source. Consult the datasheet for specific biasing requirements.
  • The maximum continuous drain current rating for the BSS123 is 1.5 A, but it can handle up to 3 A for short pulses (≤ 100 μs). Exceeding these ratings may damage the device.
  • Handle the BSS123 with ESD-protective equipment, such as wrist straps or mats. Avoid touching the device's pins or leads, and store it in an ESD-protective package when not in use.
  • Yes, the BSS123 can be used as a switch in high-frequency circuits, but be aware of its switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize ringing and oscillations.

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BSS123 Overview

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Part Image BSS123TA Zetex / Diodes Inc

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS123-T NXP Semiconductors

Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS123D87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

Part Image BSS123/L99Z National Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image BSS123/S62Z National Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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