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C3M0021120D - Wolfspeed

Description: 1200 V, 21 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET

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C3M0021120D - Wolfspeed - PCB symbol
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PCB Footprints
C3M0021120D - Wolfspeed PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3L
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3D Models
C3M0021120D - Wolfspeed - 3D model - Transistor Outline, Vertical - TO-247-3L
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C3M0021120D Details

  • Manufacturer Part Number:

    C3M0021120D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    81 A

  • Drain-source On Resistance-Max:

    0.0288 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    469 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Reference Standard:

    IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0021120D Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Use a gold wire with a diameter of 0.7-1.0 mil (18-25 μm) and a bonding force of 2-5 grams. The bonding temperature should be between 150°C to 180°C. Ensure the bonding area is clean and free of oxidation.
  • Store the devices in anti-static packaging and handle them with anti-static wrist straps or mats. Ground the device to a common point during handling and assembly.
  • Yes, a gate resistor can help reduce oscillations. A value between 10-50 ohms is recommended, depending on the specific application and circuit design.
  • Use a gate drive circuit with a low output impedance and a fast rise/fall time (less than 10 ns). Ensure the gate drive voltage is within the recommended range (typically 0-5V).

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C3M0021120D Overview

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C3M0021120D Alternates

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Image Part Number Model
Part Image MSC025SMA120B Microchip Technology Inc

Power Field-Effect Transistor, 103A I(D), 1200V, 0.031ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD
Part Image C3M0021120D Cree, Inc.

Power Field-Effect Transistor, 81A I(D), 1200V, 0.0288ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
Part Image MSC025SMA120B Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 103A I(D), 1200V, 0.031ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD