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C3M0060065K - Wolfspeed

Description: 650 V, 60 mΩ, TO-247-4 package, Industrial qualified, Discrete SiC MOSFET

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C3M0060065K - Wolfspeed PCB footprint - Other - Other - TO-247-4L
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C3M0060065K - Wolfspeed  - 3D model - Other - TO-247-4L
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C3M0060065K Details

  • Manufacturer Part Number:

    C3M0060065K

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    37 A

  • Drain-source On Resistance-Max:

    0.079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    99 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

C3M0060065K Frequently Asked Questions (FAQs)

  • The maximum operating temperature for the C3M0060065K is 175°C, as specified in the datasheet. However, it's recommended to derate the device's power handling at higher temperatures to ensure reliability and longevity.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels outlined in the datasheet. Additionally, consider using a gate driver with a high current capability and a low output impedance to minimize voltage droop and ensure stable operation.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal via array under the device. Ensure good thermal conductivity between the device and the heat sink or thermal interface material. A well-designed thermal management strategy can help reduce junction temperature and increase the device's reliability.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current. Consider using a voltage clamp or a zener diode for OVP, and a current sense resistor with a comparator or a dedicated OCP IC for OCP.
  • Follow the recommended soldering profile and assembly guidelines outlined in the datasheet. Use a solder with a high melting point (e.g., SAC305) and ensure the PCB is designed for the device's thermal and mechanical requirements. Avoid excessive mechanical stress, and use a reflow oven with a controlled atmosphere to minimize oxidation.

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C3M0060065K Overview

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Part Image C3M0060065K Cree, Inc.

Power Field-Effect Transistor, 37A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Part Image MSC060SMA070B4 Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 39A I(D), 700V, 0.075ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247