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CG2H40010F - Wolfspeed

Description: RF JFET Transistors GaN HEMT DC-8.0GHz, 10 Watt

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CG2H40010F - Wolfspeed  - 3D model
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CG2H40010F Details

  • Manufacturer Part Number:

    CG2H40010F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6.85

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    84 V

  • Drain Current-Max (ID):

    1.5 A

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    0.186 pF

  • Highest Frequency Band:

    C BAND

  • JESD-30 Code:

    R-CDFM-F2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Gain-Min (Gp):

    15 dB

  • Surface Mount:

    NO

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    GALLIUM NITRIDE

CG2H40010F Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal via array should have a diameter of 0.3 mm to 0.5 mm and a pitch of 0.8 mm to 1.2 mm.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to maintain a safe operating temperature.
  • A gate drive voltage of 15 V to 20 V and a current of 1 A to 2 A is recommended for optimal performance. However, the specific requirements may vary depending on the application and operating conditions.
  • Handle the device in an ESD-controlled environment, and use ESD-protective packaging and handling materials. Ground yourself and any equipment before handling the device, and avoid touching the device's pins or die.
  • Use a wire bonding technique with a 1 mil (25.4 μm) aluminum wire and a bonding force of 2 gf to 5 gf. For soldering, use a solder with a melting point of 220°C to 240°C and a soldering iron with a temperature of 250°C to 270°C.

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CG2H40010F Overview

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