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DS2777G+T&R - Analog Devices

Description: 2-Cell, Stand-Alone, Li+ Fuel-Gauge IC with Protector and Optional SHA-1 Authentication

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DS2777G+T&R - Analog Devices PCB footprint - Other - Other - DFN300X500X80-15N
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DS2777G+T&R Details

  • Manufacturer Part Number:

    DS2777G+T&R

  • Brand Name:

    Analog Devices Inc

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    14-LFCSP-3X5X0.8

  • Package Description:

    TDFN-14

  • Pin Count:

    14

  • Manufacturer Package Code:

    14-LFCSP-3X5X0.8

  • Country Of Origin:

    Japan, Mainland China, Malaysia, Philippines, Singapore, South Korea, Taiwan, Thailand, USA

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Date Of Intro:

    2008-11-07

  • Manufacturer:

    Analog Devices Inc

  • YTEOL:

    10

  • Adjustable Threshold:

    YES

  • Analog IC - Other Type:

    BATTERY GAUGE

  • JESD-30 Code:

    R-XDSO-N14

  • JESD-609 Code:

    e4

  • Length:

    5 mm

  • Moisture Sensitivity Level:

    1

  • Number of Channels:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    14

  • Operating Temperature-Max:

    70 °C

  • Operating Temperature-Min:

    -20 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC14,.2,16

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    0.8 mm

  • Supply Current-Max (Isup):

    0.3 mA

  • Supply Voltage-Max (Vsup):

    9.2 V

  • Supply Voltage-Min (Vsup):

    4 V

  • Surface Mount:

    YES

  • Temperature Grade:

    OTHER

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    0.4 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    3 mm

DS2777G+T&R Frequently Asked Questions (FAQs)

  • A good PCB layout for the DS2777G+T&R involves keeping the analog and digital grounds separate, using a solid ground plane, and minimizing the length of the traces connecting the device to the battery and the sense resistor. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.
  • Calibration of the DS2777G+T&R involves setting the device's internal registers to match the specific battery chemistry and capacity. This can be done using the device's built-in calibration routine, which involves charging and discharging the battery while monitoring the device's output. The calibration process typically requires a few charge/discharge cycles to achieve accurate results.
  • The DS2777G+T&R is rated for operation over a temperature range of -40°C to +85°C. However, it's recommended to operate the device within a temperature range of 0°C to +70°C for optimal performance and accuracy.
  • Yes, the DS2777G+T&R can be used with multiple battery chemistries, including lithium-ion, nickel-cadmium, and lead-acid. However, the device's internal registers may need to be reconfigured for each battery chemistry, and the calibration process may need to be repeated.
  • The DS2777G+T&R takes into account battery self-discharge when calculating the battery's state of charge. The device uses a combination of coulomb counting and voltage-based state of charge estimation to accurately track the battery's capacity, even when the battery is not in use.

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DS2777G+T&R Overview

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About Analog Devices

Analog Devices Inc. is a global leader in the design and manufacturing of analog, mixed-signal, and digital signal processing integrated circuits and software solutions for the industrial, automotive, healthcare, communications industries. Analog Devices serves a diverse range of markets including industrial, automotive, healthcare, energy, aerospace, defense, and consumer electronics industries. Analog Devices’ product portfolio includes a wide range of ICs, modules, and subsystems.

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