FCP190N60E - onsemi

Description: 650V @TJ = 150°C; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 63nC ); Max. RDS(on) = 190mΩ; Low effective output capacitance ( Typ. Coss.eff = 178pF )

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FCP190N60E - onsemi

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