FCP19 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FCP190N65S3 onsemi	1	700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 33 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF); Optimized Capacitance; Internal Gate resistance: 7.0 ohm; Typ. RDS(on) = 159 mΩ; 100% Avalanche Tested; RoHS Compliant	Transistor Outline, Vertical	FCP190N65S3	3D model available Symbol and footprint available 3	1 Download Model
	FCP190N65S3R0 onsemi	1	Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 17 A, 190 mΩ, TO-220	Transistor Outline, Vertical	FCP190N65S3R0	3D model available Symbol and footprint available 3	1 Download Model
	FCP1913H563J-E2 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 5% +Tol, 5% -Tol, 0.056uF, Surface Mount, 1913		FCP1913H563J-E2	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP190N60-GF102 onsemi	1	Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 20.2 A, 199mΩ, TO-220, TO-220 3L, 800-TUBE		FCP190N60-GF102	3D model not available Symbol and footprint not available 0	0 Build or Request

	FCP1913H683G-E2 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 2% +Tol, 2% -Tol, 0.068uF, Surface Mount, 1913, CHIP		FCP1913H683G-E2	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP190N60 onsemi	1	Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FCP190N60	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H683G-E1 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 2% +Tol, 2% -Tol, 0.068uF, Surface Mount, 1913		FCP1913H683G-E1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H104J-E3 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 5% +Tol, 5% -Tol, 0.1uF, Surface Mount, 1913		FCP1913H104J-E3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP190N60 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FCP190N60	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP190N60MF Micross Components	1	Power Field-Effect Transistor		FCP190N60MF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H823G-E4 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 2% +Tol, 2% -Tol, 0.082uF, Surface Mount, 1913, CHIP		FCP1913H823G-E4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP190N60EMW Micross Components	1	Power Field-Effect Transistor		FCP190N60EMW	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP190N60MW Micross Components	1	Power Field-Effect Transistor		FCP190N60MW	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H473G-E1 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 2% +Tol, 2% -Tol, 0.047uF, Surface Mount, 1913		FCP1913H473G-E1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H823J-E2 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulfide, 50V, 5% +Tol, 5% -Tol, 0.082uF, Surface Mount, 1913		FCP1913H823J-E2	3D model not available Symbol and footprint not available 0	0 Build or Request

	FCP1913H104G-E2 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 2% +Tol, 2% -Tol, 0.1uF, Surface Mount, 1913		FCP1913H104G-E2	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP190N60MD Micross Components	1	Power Field-Effect Transistor		FCP190N60MD	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H563J-E1 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulfide, 50V, 5% +Tol, 5% -Tol, 0.056uF, Surface Mount, 1913		FCP1913H563J-E1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H823J-E4 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 5% +Tol, 5% -Tol, 0.082uF, Surface Mount, 1913		FCP1913H823J-E4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H683J-E2 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 5% +Tol, 5% -Tol, 0.068uF, Surface Mount, 1913		FCP1913H683J-E2	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H563G-E1 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 2% +Tol, 2% -Tol, 0.056uF, Surface Mount, 1913		FCP1913H563G-E1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP190N60E Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		FCP190N60E	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP190N60EMD Micross Components	1	Power Field-Effect Transistor		FCP190N60EMD	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H104G-E3 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulphide, 50V, 2% +Tol, 2% -Tol, 0.1uF, Surface Mount, 1913, CHIP		FCP1913H104G-E3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FCP1913H473J-E1 Cornell Dubilier Electronics Inc	1	Film Capacitor, Polyphenylene Sulfide, 50V, 5% +Tol, 5% -Tol, 0.047uF, Surface Mount, 1913		FCP1913H473J-E1	3D model not available Symbol and footprint not available 0	0 Build or Request
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