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FCP190N65S3R0 - onsemi

Description: Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 17 A, 190 mΩ, TO-220

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PCB Footprints
FCP190N65S3R0 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 *variation AB
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3D Models
FCP190N65S3R0 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 *variation AB
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FCP190N65S3R0 Details

  • Manufacturer Part Number:

    FCP190N65S3R0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    76 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    144 W

  • Pulsed Drain Current-Max (IDM):

    42.5 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCP190N65S3R0 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for FCP190N65S3R0 is a 5x6mm pad with a 0.5mm thermal pad in the center, and a 1.5mm keep-out zone around the device.
  • To ensure reliable operation in high-temperature environments, ensure that the device is properly heatsinked, and the junction temperature (Tj) is kept below the maximum rating of 150°C. Also, consider derating the device's power handling capabilities at higher temperatures.
  • The recommended gate drive voltage for FCP190N65S3R0 is between 10V and 15V, with a gate current of 1A to 2A. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • To protect FCP190N65S3R0 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.
  • The maximum allowed voltage imbalance between the drain and source pins of FCP190N65S3R0 is ±20V. Exceeding this limit may cause damage to the device.

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FCP190N65S3R0 Overview

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