FCPF150N65F - onsemi

Description: Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF); 100% Avalanche Tested; 700 V @ TJ = 150°C; RoHS Compliant; Ultra Low Gate Charge (Typ. Qg = 72 nC); Typ. RDS(on) = 133 mΩ

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Image	Part Number	Model
	FCPF150N65FL1 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 24A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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FCPF150N65F - onsemi

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