FCPF190N60E-F154 - onsemi

Description: Ultra low gate charge ( Typ. Qg = 63nC ); Low effective output capacitance ( Typ. Coss.eff = 178pF ); 650V @TJ = 150°C; Max. RDS(on) = 190mΩ; 100% avalanche tested

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Image	Part Number	Model
	FCPF190N60E Fairchild Semiconductor Corporation Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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FCPF190N60E-F154 - onsemi

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