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FCPF250N65S3L1-F154 - onsemi

Description: MOSFET Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 12 A, 250 mohm, TO-220F Ultra narrow lead

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FCPF250N65S3L1-F154 Details

  • Manufacturer Part Number:

    FCPF250N65S3L1-F154

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220 FULLPACK, 3-LEAD (ULTRA NARROW LEAD)

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221BN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    57 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF250N65S3L1-F154 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the thermal relief pattern.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including using a heat sink, ensuring good thermal interface material (TIM) between the device and heat sink, and keeping the junction temperature (Tj) below the maximum rated value of 150°C.
  • During reliability testing, it's crucial to monitor parameters such as drain-source voltage (Vds), gate-source voltage (Vgs), drain current (Id), and junction temperature (Tj) to ensure the device operates within its specified limits and to detect any potential failures.
  • When selecting a gate driver for the FCPF250N65S3L1-F154, consider factors such as the driver's output current capability, rise and fall times, and voltage rating. The gate driver should be able to provide a peak current of at least 2A and have a voltage rating that matches the device's gate-source voltage rating of ±20V.
  • The internal gate resistance of the FCPF250N65S3L1-F154 can affect the device's switching performance, particularly at high frequencies. It's essential to consider the gate resistance when designing the gate drive circuit to ensure optimal switching performance and to minimize ringing and oscillations.

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FCPF250N65S3L1-F154 Overview

Use the download button to access the FCPF250N65S3L1-F154 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Power Field-Effect Transistor, 12A I(D), 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB