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FCPF360N65S3R0L-F154 - onsemi

Description: 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 18 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF); Optimized Capacitance; Internal Gate Resistance: 1 Ω; Typ. RDS(on) = 310 mΩ; RoHS Compliant; 100% Avalanche Tested

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FCPF360N65S3R0L-F154 Details

  • Manufacturer Part Number:

    FCPF360N65S3R0L-F154

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220 FULLPACK, 3-LEAD (ULTRA NARROW LEAD)

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221BN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    40 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    27 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF360N65S3R0L-F154 Frequently Asked Questions (FAQs)

  • The FCPF360N65S3R0L-F154 can operate safely between -55°C and 150°C (TJ), with a maximum junction temperature (TJ) of 150°C.
  • To ensure reliability, follow the recommended layout and PCB design guidelines, minimize parasitic inductance, and use a suitable gate driver with a low impedance output stage. Additionally, consider using a MOSFET with a built-in Schottky diode, like the FCPF360N65S3R0L-F154, to reduce ringing and oscillations.
  • The recommended gate drive voltage for the FCPF360N65S3R0L-F154 is between 10V and 15V, with a maximum gate-source voltage (VGS) of ±20V. A higher gate drive voltage can reduce switching losses, but be careful not to exceed the maximum VGS rating.
  • Use the datasheet's thermal resistance (RθJA) and power dissipation (PD) ratings to calculate the maximum allowable power dissipation. Then, consider the application's specific requirements, such as the ambient temperature, heat sink design, and airflow, to determine the necessary thermal management measures.
  • Yes, the FCPF360N65S3R0L-F154 is designed for high-voltage applications, with a maximum drain-source voltage (VDS) rating of 650V. However, ensure that the device is used within its specified voltage and current ratings to prevent damage or failure.

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FCPF360N65S3R0L-F154 Overview

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Part Image MMF60R360QTH MagnaChip Semiconductor Ltd

Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-220AB

Part Image FCPF360N65S3R0L onsemi

Power Field-Effect Transistor, 10A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB