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FCPF380N65FL1-F154 - onsemi

Description: 700 V @TJ = 150°C; Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF); Ultra Low Gate Charge (Typ. Qg = 33 nC); RDS(on) = 320 mΩ (Typ.); 100% Avalanche Tested; RoHS CompliantApplications

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FCPF380N65FL1-F154 Alternates

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Part Image FCPF380N65FL1 onsemi

Power Field-Effect Transistor, 10.2A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB