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FCPF400N80ZL1-F154 - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 43 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 138 pF); Low Eoss (Typ. 4.1 uJ @ 400 V); Typ. RDS(on) = 340 mΩ; 100% Avalanche Tested; RoHS Compliant; ESD Improved Capability

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FCPF400N80Z onsemi

Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

FCPF400N80ZL1 onsemi

Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB


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Image	Part Number	Model
	FCPF400N80Z onsemi Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	FCPF400N80ZL1 onsemi Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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FCPF400N80ZL1-F154 - onsemi

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