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FCPF400N80Z - onsemi

Description: Typ. RDS(on) = 340 mΩ; RoHS Compliant; Ultra low gate charge (Typ. Qg = 43 nC); Low effective output capacitance (typ. Cosseff. = 138 pF); 100% avalanche tested

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PCB Footprints
FCPF400N80Z - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B_2024
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3D Models
FCPF400N80Z - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B_2024
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FCPF400N80Z
  • Part Number FCPF400N80Z
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT ISSUE B_2024
  • Released Date Mar 27, 2024
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FCPF400N80Z Details

  • Manufacturer Part Number:

    FCPF400N80Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    SC-91A, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    339 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35.7 W

  • Pulsed Drain Current-Max (IDM):

    33 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF400N80Z Frequently Asked Questions (FAQs)

  • The maximum junction temperature that FCPF400N80Z can withstand is 175°C.
  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
  • The recommended gate drive voltage for FCPF400N80Z is between 10V to 15V, with a maximum voltage of 20V.
  • Yes, FCPF400N80Z can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and current sharing between devices.
  • To protect FCPF400N80Z from overvoltage and overcurrent conditions, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current sense resistor.

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FCPF400N80Z Overview

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Part Image FCPF400N80ZL1 onsemi

Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB