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FDB5800 - onsemi

Description: RoHS Compliant; Qualified to AEC Q101; RDS(on) = 4.6mΩ (Typ.) @ VGS = 10V, ID = 80A; High power and current handling capability; Low Gate Charge; High performance trench technology for extermly low RDS(on)

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FDB5800 - onsemi - PCB symbol
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PCB Footprints
FDB5800 - onsemi PCB footprint - Other - Other - FDB5800-5
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FDB5800 Details

  • Manufacturer Part Number:

    FDB5800

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    652 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0126 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    262 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    242 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    59 ns

  • Turn-on Time-Max (ton):

    62.1 ns

FDB5800 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDB5800 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDB5800 for low standby power consumption, ensure that the EN pin is properly biased to shut down the device when not in use. Also, consider using a low-ESR output capacitor and optimizing the inductor selection to minimize losses. Finally, adjust the switching frequency to the lowest possible value while maintaining the required output voltage.
  • The FDB5800 has a maximum junction temperature of 150°C. To ensure reliable operation, ensure good airflow around the device, use a heat sink if necessary, and avoid overheating the device during soldering or rework. Also, consider using thermal interface materials to improve heat transfer between the device and the heat sink.
  • To troubleshoot issues with the FDB5800, start by verifying the input voltage, output voltage, and current levels. Check for proper PCB layout, component selection, and soldering quality. Use an oscilloscope to inspect the switching node (SW) and output voltage waveforms. Consult the datasheet and application notes for guidance on troubleshooting specific issues.
  • Yes, the FDB5800 is suitable for high-reliability and automotive applications. However, ensure that the device is properly qualified and validated for the specific application requirements. Consult the datasheet and onsemi's reliability reports for more information.

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FDB5800 Overview

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FDB5800 Alternates

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Part Image FDB5800 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 80A I(D), 60V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB