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FDB8444 - onsemi

Description: Low Qrr Body Diode ; Typ rDS(on) = 3.9mΩ at VGS = 10V, ID = 70A ; Typ Qg(TOT) = 91nC at VGS = 10V ; Low Miller Charge ; Qualified to AEC Q101 ; UIS Capability (Single Pulse and Repetitive Pulse) ; RoHS Compliant

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FDB8444 Alternates

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Part Image FDB8444 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 70A I(D), 40V, 9.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB