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FDB8832-F085 - onsemi

Description: Obsolete - N-Channel Logic Level PowerTrench MOSFET, 30V, 80A, 2.6mΩ

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PCB Footprints
FDB8832-F085 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F_1
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FDB8832-F085 Details

  • Manufacturer Part Number:

    FDB8832-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1246 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.0022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB8832-F085 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the IC, using a solid ground plane, and keeping the thermal traces as short and wide as possible. It's also recommended to use a thermal pad on the bottom of the IC and connect it to a heat sink or a thermal plane.
  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings in the datasheet. The FDB8832-F085 requires a VCC of 3.3V ± 10% and a VGS of 2.5V ± 10%. Also, ensure that the input and output pins are properly terminated to prevent ringing and oscillations.
  • The maximum allowable power dissipation for the FDB8832-F085 is 1.5W. However, it's recommended to keep the power dissipation below 1W to ensure reliable operation and prevent overheating.
  • To protect the FDB8832-F085 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure that the PCB and components are properly grounded, and use ESD-sensitive handling and storage procedures.
  • The recommended operating frequency range for the FDB8832-F085 is up to 100 MHz. However, the device can operate at higher frequencies with proper design and layout considerations.

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FDB8832-F085 Overview

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FDB8832-F085 Alternates

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Image Part Number Model
Part Image FDB8832 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image FDB8832_F085 onsemi

30V, 80A, 1.5mΩ, D2PAK, Logic Level N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL