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FDC855N - onsemi

Description: SuperSOT™ -6 package: small footprint (72% smaller thanstandard SO-8; low profile (1mm thick). ; RoHS Compliant ; Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A ; Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A

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PCB Footprints
FDC855N - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SSOT 6L
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3D Models
FDC855N - onsemi  - 3D model - SOT23 (6-Pin) - SSOT 6L
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FDC855N Details

  • Manufacturer Part Number:

    FDC855N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TSOT-23-6

  • Package Description:

    TSOT-23, 6 PIN

  • Manufacturer Package Code:

    419BL

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.1 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    95 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    33 ns

  • Turn-on Time-Max (ton):

    22 ns

FDC855N Frequently Asked Questions (FAQs)

  • The FDC855N can operate from -40°C to 125°C, making it suitable for a wide range of applications.
  • The FDC855N requires a bias voltage of 2.5V to 5.5V, and the input voltage should be within 10% of the supply voltage to ensure proper operation.
  • The FDC855N has a maximum current rating of 100mA, making it suitable for low-power applications.
  • The FDC855N has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing to prevent damage.
  • Yes, the FDC855N is suitable for high-frequency applications up to 100 MHz, but it's essential to follow proper PCB layout and design guidelines to minimize signal degradation.

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FDC855N Overview

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