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FDD10AN06A0 - onsemi

Description: N-Channel 60 V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA , -55°C ~ 175°C (TJ)

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PCB Footprints
FDD10AN06A0 - onsemi PCB footprint - Other - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2026-2.3
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FDD10AN06A0 Details

  • Manufacturer Part Number:

    FDD10AN06A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AA, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    429 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    110 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    135 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    97 ns

  • Turn-on Time-Max (ton):

    131 ns

FDD10AN06A0 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the FDD10AN06A0 is 150°C. Exceeding this temperature can lead to device failure.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of 10°C/W or lower, and ensuring good airflow around the device. Additionally, the PCB design should allow for good thermal conduction.
  • The recommended gate drive voltage for the FDD10AN06A0 is between 10V and 15V. This ensures proper switching and minimizes power losses.
  • Yes, the FDD10AN06A0 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation.
  • To protect the FDD10AN06A0, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes, and consider adding overcurrent protection using a fuse or a current sense resistor.

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FDD10AN06A0 Overview

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Part Image FDD10AN06A0 Rochester Electronics LLC

11A, 60V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN