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FDD86367 - onsemi

Description: Typical RDS(on) = 3.3 mΩ at VGS = 10 V, ID = 80 A; Typical Qg(TOT) = 68 nC at VGS = 10 V, ID = 80 A; UIS Capability; RoHS Compliant

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FDD86367 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_12
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FDD86367 Details

  • Manufacturer Part Number:

    FDD86367

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Date Of Intro:

    2017-01-27

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    82 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    31 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    227 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    80 ns

  • Turn-on Time-Max (ton):

    104 ns

FDD86367 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Use a gate drive circuit with a low impedance output stage and a high current capability. Ensure the gate drive voltage is within the recommended range (10-15V) and the rise/fall times are <10ns.
  • The maximum allowed voltage on the bootstrap capacitor is 20V. Exceeding this voltage may damage the device.
  • Implement a dead-time control circuit to prevent simultaneous conduction of the high-side and low-side FETs. Ensure the dead-time is >10ns and the gate drive circuit is properly designed.
  • The recommended operating frequency range is 100 kHz to 500 kHz. Operating outside this range may affect device performance and reliability.

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FDD86367 Overview

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Part Image FDD86367_F085 onsemi

80V, 100A, 3.3 mΩ, DPAK N-Channel PowerTrench®, TO-252 3L (DPAK), 5000-TAPE REEL