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FDG312P - onsemi

Description: Obsolete - N-Channel Digital FET 25V, 0.95A, 0.45Ω

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PCB Footprints
FDG312P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - FDG312P-1
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3D Models
FDG312P - onsemi  - 3D model - SOT23 (6-Pin) - FDG312P-1
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FDG312P Details

  • Manufacturer Part Number:

    FDG312P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Package Description:

    SC-70, 6 PIN

  • Manufacturer Package Code:

    419B-02

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    1.2 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDG312P Frequently Asked Questions (FAQs)

  • The FDG312P can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDG312P requires a bias voltage of 12V to 15V, and a bias current of 1mA to 5mA. Ensure the bias circuit is designed to provide a stable voltage and current within these ranges.
  • Use a multi-layer PCB with a solid ground plane to minimize thermal resistance. Ensure good thermal conductivity between the device and the PCB. Use thermal vias and a heat sink if necessary.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Ensure proper handling and storage procedures to prevent ESD damage.
  • The maximum power dissipation for the FDG312P is 1.5W. Ensure the device is operated within this limit to prevent overheating and damage.

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FDG312P Overview

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Part Image FDG312P Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET