FDH45N50F-F133 - onsemi

Description: RDS(on) = 120mΩ ( Max.)@ VGS = 10V, ID = 22.5A; Improved dv/dt capability; Low Crss ( Typ. 62pF); 100% avalanche tested; Low gate charge ( Typ. 105nC)

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FDH45N50F-F133 - onsemi

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