FDME410NZT - onsemi
Description: Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A ; Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A ; Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4A ; RoHS Compliant ; Free from halogenated compounds and antimony oxides ; HBM ESD protection level > 1800V (Note3); Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID= 5 A ; Low profile: 0.55 mm maximum in the new packageMicroFET 1.6x1.6 Thin
ECAD model is currently unavailable for this part
