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FDMS5352 - onsemi

Description: Max rDS(on) = 8.2mΩ at VGS = 4.5V, ID = 12.3A ; Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 13.6A ; MSL1 robust package design ; 100% UIL Tested ; RoHS Compliant ; Advanced Package and Silicon combination for low rDS(on)

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PCB Footprints
FDMS5352 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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3D Models
FDMS5352 - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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FDMS5352 Details

  • Manufacturer Part Number:

    FDMS5352

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    13.6 A

  • Drain-source On Resistance-Max:

    0.0067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS5352 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature (TJ) and ensure it stays within the recommended range.
  • A 10uF to 22uF X7R or X5R ceramic capacitor is recommended for the input capacitor (CIN). This value provides a good balance between filtering and stability.
  • Choose an output capacitor with low ESR (Equivalent Series Resistance) and a capacitance value between 10uF to 47uF. A 22uF to 33uF X5R or X7R ceramic capacitor is a good starting point.
  • Keep high-current paths short and wide, using thick copper traces (at least 1 oz). Avoid sharp corners and use rounded edges to reduce current density. Use multiple vias to connect the device to the PCB's ground plane.

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FDMS5352 Overview

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Part Image FDMS5352 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 13.6A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET