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FDP3632 - onsemi

Description: Qg(tot) = 84nC (Typ.), VGS = 10V ; Qualified to AEC Q101 ; Low QRR Body Diode ; UIS Capability (Single Pulse and Repetitive Pulse) ; Low Miller Charge ; rDS(ON) = 7.5m? (Typ.), VGS = 10V, ID = 80A ; RoHS Compliant

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Part Image FDP3632 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FDP3632_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB