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FDP3652 - onsemi

Description: Low Qrr Body Diode ; Low Miller Charge ; rDS(ON) = 14mΩ(Typ.), VGS = 10V, ID = 61A ; Qg(tot) = 41nC (Typ.), VGS = 10V ; UIS Capability (Single Pulse and Repetitive Pulse)

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FDP3652 Details

  • Manufacturer Part Number:

    FDP3652

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    182 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP3652 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • A 10uF to 22uF X7R or X5R ceramic capacitor is recommended, with a voltage rating of 25V or higher. The capacitor should be placed as close to the VIN pin as possible.
  • Use a shielded enclosure, keep the PCB layout compact, and minimize loop areas. Add EMI filters or common-mode chokes if necessary. Ensure proper grounding and decoupling of the device.
  • The maximum allowed voltage drop is 0.5V. Ensure that the input voltage is within the recommended range, and the output voltage is within the specified regulation range.

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FDP3652 Overview

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Part Image FDP3652 Rochester Electronics LLC

9A, 100V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN

Part Image FDP3652 Fairchild Semiconductor Corporation

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Part Image FDP3652_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB