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FDPC8011S-AU01 - onsemi

Description: Q1 N-Channel Max. RDS(on) = 7.3 mΩ at VGS = 4.5 V, ID = 12 A; Q2 N-Channel Max. RDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 12 A; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing ; RoHS Compliant

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FDPC8011S-AU01 - onsemi

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