FDPC8 Model Download Search Results
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FDPC8012S
onsemi
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1 | Q2 N-Channel Max. RDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 23 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing ; Q1 N-Channel Max. RDS(on) = 7.0 mΩ at VGS = 4.5 V, ID = 12 A; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; RoHS Compliant | Other | FDPC8012S |
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FDPC8016S
onsemi
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1 | Q1 N-Channel Max. RDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A Max. RDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A; Low inductance packaging shortens rise/fall times, resulting in lower switching losses; RoHS Compliant; Q2 N-Channel Max. RDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A Max. RDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing | Other | FDPC8016S |
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FDPC8014S
onsemi
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1 | Q2 N-Channel Max. RDS(on) = 1.2 mΩ at VGS = 10 V, ID = 41 A Max. RDS(on) = 1.4 mΩ at VGS = 4.5 V, ID = 37 A; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; RoHS Compliant ; Q1 N-Channel Max. RDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A Max. RDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing | Other | FDPC8014S |
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FDPC8011S
onsemi
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1 | 25V Asymmetric Dual N-Channel PowerTrench® Power Clip MOSFET | Other | FDPC8011S |
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FDPC8011S
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 13A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | FDPC8011S |
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FDPC8012S
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 13A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | FDPC8012S |
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FDPC8013S
onsemi
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1 | RoHS Compliant ; Q1 N-Channel Max. RDS(on) = 9.6 mΩ at VGS = 4.5 V, ID = 10 A; Q2 N-Channel Max. RDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 22 A; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing | FDPC8013S |
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FDPC8014S
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 20A I(D), 25V, 0.0038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDPC8014S |
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FDPC8014AS
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor | FDPC8014AS |
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FDPC8011S-AU01
onsemi
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1 | Power Field-Effect Transistor | FDPC8011S-AU01 |
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FDPC8013S
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 55A I(D), N-Channel, Metal-oxide Semiconductor FET | FDPC8013S |
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FDPC8016S
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 20A I(D), 25V, 0.0038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDPC8016S |
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FDPC8014AS
onsemi
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1 | Power Field-Effect Transistor, 159A I(D), 25V, 0.001ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDPC8014AS |
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