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FDPF680N10T - onsemi

Description: RoHS Compliant; RDS(on) = 54mΩ ( Typ.) @ VGS = 10V, ID = 6A; Fast Switching Speed; Low Gate Charge; High Performance Trench Technology for Extremely Low RDS(on); High Power and Current Handling Capability

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FDPF680N10T - onsemi - PCB symbol
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PCB Footprints
FDPF680N10T - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead +
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3D Models
FDPF680N10T - onsemi - 3D model - Transistor Outline, Vertical - TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead +
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FDPF680N10T
  • Part Number FDPF680N10T
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead +
  • Released Date Aug 7, 2016
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FDPF680N10T Details

  • Manufacturer Part Number:

    FDPF680N10T

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    50.4 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.068 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    24 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF680N10T Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) that the FDPF680N10T can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a metal plate. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is designed to handle the maximum power dissipation of the device.
  • The recommended gate drive voltage for the FDPF680N10T is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the FDPF680N10T is designed for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic inductance when designing the circuit. Consult the datasheet and application notes for more information on high-frequency operation.
  • To protect the FDPF680N10T from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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