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FDS4435BZ-F085 - onsemi

Description: Termination is Lead-free and RoHS compliant; Qualified to AEC Q101; HBM ESD protection level of ±3.8KV typical (note 3); High power and current handling capability; High performance trench technology for extremely low rDS(on); Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A; Max rDS(on)= 20mΩ at VGS = -10V, ID= -8.8A; Extended VGSS range (-25V) for battery applications

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FDS4435BZ onsemi

Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

FDS4435BZ Rochester Electronics LLC

8800mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8

FDS6675A Rochester Electronics LLC

11000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8

FDS4435BZ Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8.8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET


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Image	Part Number	Model
	FDS4435BZ onsemi Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
	FDS4435BZ Rochester Electronics LLC 8800mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8
	FDS6675A Rochester Electronics LLC 11000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8
	FDS4435BZ Fairchild Semiconductor Corporation Power Field-Effect Transistor, 8.8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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FDS4435BZ-F085 - onsemi

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