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FDV301N-F169 - onsemi

Description: RDS(ON) = 5 Ω @ VGS= 2.7 V; • 25 V, 0.22 A continuous, 0.5 A Peak. ; RDS(ON) = 4 Ω @ VGS= 4.5 VGS(th) < 1.06; Gate-Source Zener for ESD ruggedness. >6kV Human Body Model; Replace multiple NPN digital transistors with one DMOS FET

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FDV301N-F169 - onsemi

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