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FF200R12KT3_E - Infineon

Description: Infineon FF200R12KT3_E, IGBT Module, Dual, 295 A max, 1200 V, 7-Pin 62MM Module

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Part Image FF200R12KT3HOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel