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FF450R12KE4_E - Infineon

Description: IGBT Modules MEDIUM POWER 62MM

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FF450R12KE4_E - Infineon  - 3D model
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FF450R12KE4_E Details

  • Manufacturer Part Number:

    FF450R12KE4_E

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    520 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X7

  • Number of Elements:

    2

  • Number of Terminals:

    7

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2400 W

  • Reference Standard:

    UL APPROVED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    800 ns

  • Turn-on Time-Nom (ton):

    325 ns

  • VCEsat-Max:

    2.15 V

FF450R12KE4_E Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the FF450R12KE4_E is 150°C, but it's recommended to operate it at a maximum junction temperature of 125°C for reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 0.1 K/W, ensuring good thermal contact between the module and heat sink, and providing adequate airflow.
  • The recommended gate resistor value is between 10 Ω and 20 Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
  • Yes, the FF450R12KE4_E can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum allowable voltage transient for the FF450R12KE4_E is ±10% of the rated voltage, with a maximum duration of 100 ms.

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FF450R12KE4_E Overview

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Part Image FF450R12KE4P Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel