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FGH25T120SMD-F155 - onsemi

Description: 100% of The Parts Tested for ILM(1); High Speed Switching; Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 25 A; High Input Impedance; RoHS Compliant; FS Trench Technology, Positive Temperature Coefficient

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FGH25T120SMD-F155 Overview

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Part Image FGH25T120SMD_F155 onsemi

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

Part Image FGH25T120SMD Micross Components

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel