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FQB11N40CTM - onsemi

Description: 10.5 A, 400V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A; Low Crss (Typ. 85 pF); Low Gate Charge (Typ. 28 nC); 100% Avalanche Tested

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FQB11N40CTM Alternates

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Image Part Number Model
Part Image FQB11N40CTM Rochester Electronics LLC

10.5A, 400V, 0.53ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, D2PAK-3

Part Image IRFW740BTM Rochester Electronics LLC

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Part Image IRFW740BTM Fairchild Semiconductor Corporation

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Part Image FQB11N40C onsemi

Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFW740B Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for FQB11N40CTM, check out Findchips.com