FQB11 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQB11P06TM onsemi	1	Last Shipments - Power MOSFET, N-Channel, QFET, 200 V, 19 A, 170 mΩ, D2PAK	Other	FQB11P06TM	3D model not available Symbol and footprint available 2	1 Download Model
	FQB11N40TM Rochester Electronics LLC	1	11.4A, 400V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3		FQB11N40TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB11N40 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.4A I(D), 400V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB11N40	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB11N40TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.4A I(D), 400V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB11N40TM	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQB11P06TM Rochester Electronics LLC	1	11.4A, 60V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3		FQB11P06TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB11P06 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB11P06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB11N40CTM Rochester Electronics LLC	1	10.5A, 400V, 0.53ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, LEAD FREE, D2PAK-3		FQB11N40CTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB11N40CTM onsemi	1	Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB11N40CTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB11N40C onsemi	1	Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQB11N40C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB11P06TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB11P06TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB11N40C Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQB11N40C	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB11N40CTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB11N40CTM	3D model not available Symbol and footprint not available 0	0 Build or Request

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