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FQB11P06TM - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, QFET, 200 V, 19 A, 170 mΩ, D2PAK

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PCB Footprints
FQB11P06TM - onsemi PCB footprint - Other - Other - TO263 (D2PAK)_2021
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FQB11P06TM Details

  • Manufacturer Part Number:

    FQB11P06TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D2PAK-3

  • Manufacturer Package Code:

    418AJ

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11.4 A

  • Drain-source On Resistance-Max:

    0.175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    53 W

  • Pulsed Drain Current-Max (IDM):

    45.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQB11P06TM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQB11P06TM is -55°C to 150°C.
  • To ensure proper biasing, the FQB11P06TM requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 10V and 60V. Additionally, a gate resistor (Rg) of 1kΩ to 10kΩ is recommended to prevent oscillations.
  • The maximum current rating for the FQB11P06TM is 11A, with a pulsed current rating of 22A.
  • To protect the FQB11P06TM from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package. Additionally, use ESD-sensitive handling procedures when assembling the device onto a PCB.
  • For optimal performance, use a multi-layer PCB with a solid ground plane, and ensure that the drain and source pins are connected to a low-impedance path to the power supply. Additionally, keep the gate trace as short as possible and use a gate resistor to prevent oscillations.

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FQB11P06TM Overview

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Part Image FQB11P06TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image FQB11P06 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB