Part Image

FQB12P20TM - onsemi

Description: Low Crss ( Typ. 30pF); Low gate charge ( Typ. 31nC); RoHS Compliant; -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A; 100% avalanche tested

Download FQB12P20TM Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQB12P20TM - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F-ren1
click to zoom

FQB12P20TM Details

  • Manufacturer Part Number:

    FQB12P20TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.97

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    810 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    11.5 A

  • Drain-source On Resistance-Max:

    0.47 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    120 W

  • Pulsed Drain Current-Max (IDM):

    46 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQB12P20TM Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • A non-inverting gate driver with a high current capability (e.g., TC4420 or equivalent) is recommended. Ensure the driver can provide a minimum of 2A peak current and has a propagation delay of <10ns.
  • Implement a robust overvoltage protection (OVP) circuit and consider adding a current sense resistor with an overcurrent protection (OCP) circuit. Ensure the OVP and OCP circuits can respond quickly to fault conditions.
  • Keep the layout compact, use a solid ground plane, and minimize loop areas. Ensure the device's pins are connected to the PCB with short, direct traces. Use shielding and filtering components as necessary.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQB12P20TM Overview

Use the download button to access the FQB12P20TM schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like FQB12, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQB12P20TM

Showing 0 results

FQB12P20TM Alternates

Showing results

Image Part Number Model
Part Image FQB12P20TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB