FQB19N20CTM - onsemi

Description: 100% avalanche tested; Low gate charge ( Typ. 40.5nC); RoHS compliant; 19A, 200V, RDS(on) = 170mΩ(Max.) @VGS = 10 V, ID = 9.5A; Low Crss ( Typ. 85pF)

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Image	Part Number	Model
	FQB19N20C onsemi Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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FQB19N20CTM - onsemi

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