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FQD11P06TM - Rochester Electronics LLC

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Part Image FQD11P06TM onsemi

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD11P06TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD11P06TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD11P06 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252