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FQD11P06TM - onsemi

Description: 100% avalanche tested; Low gate charge ( Typ. 13nC); -9.4A, -60V, RDS(on) = 185mΩ(Max.) @VGS = -10 V, ID = -4.7A; Low Crss ( Typ. 45pF)

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FQD11P06TM - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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3D Models
FQD11P06TM - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_3
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FQD11P06TM Details

  • Manufacturer Part Number:

    FQD11P06TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    9.4 A

  • Drain-source On Resistance-Max:

    0.185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    37.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD11P06TM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQD11P06TM is -55°C to 150°C.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels as specified in the datasheet, and ensure that the device is operated within the recommended operating conditions.
  • For optimal thermal performance, use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. Ensure good thermal conductivity and minimize thermal resistance.
  • Use ESD protection devices such as TVS diodes or ESD arrays in conjunction with proper PCB layout and handling practices to prevent ESD damage to the FQD11P06TM.
  • The FQD11P06TM meets the reliability and quality standards of onsemi, including AEC-Q101 and ISO/TS 16949 certifications, ensuring high reliability and quality for automotive and industrial applications.

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FQD11P06TM Overview

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Part Image FQD11P06TM Rochester Electronics LLC

9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, DPAK-3

Part Image FQD11P06TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD11P06TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD11P06 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252