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FQD12N20LTM-F085 - onsemi

Description: MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab

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FQD12N20LTM-F085 - onsemi PCB footprint - Other - Other - FQD12N20LTM-F085-4
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FQD12N20LTM-F085 Details

  • Manufacturer Part Number:

    FQD12N20LTM-F085

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    DPAK-3/2

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.32 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    55 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    380 ns

  • Turn-on Time-Max (ton):

    430 ns

FQD12N20LTM-F085 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQD12N20LTM-F085 is -55°C to 150°C.
  • Yes, the FQD12N20LTM-F085 is suitable for high-reliability applications due to its robust design and manufacturing process, which ensures high reliability and low defect rates.
  • Yes, the FQD12N20LTM-F085 is AEC-Q101 qualified, making it suitable for use in automotive applications.
  • The typical turn-on and turn-off time for the FQD12N20LTM-F085 is around 10-20 ns, depending on the specific application and operating conditions.
  • Yes, the FQD12N20LTM-F085 is compatible with lead-free soldering processes, making it suitable for use in modern electronic assemblies.

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FQD12N20LTM-F085 Overview

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Image Part Number Model
Part Image FQD12N20TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD10N20LTF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD12N20LTM_F085 onsemi

Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FQD12N20LTM_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD10N20LTM onsemi

Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for FQD12N20LTM-F085, check out Findchips.com