FQD12 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 9A, 200V, RDS(on) = 280mΩ(Max.) @VGS = 10 V, ID = 4.5A; Low level gate drive requirement allowing direct oprationfrom logic drivers; Low Crss ( Typ. 17pF); 100% avalanche tested; Low gate charge ( Typ. 16nC) Other FQD12N20LTM 1 Download Model
Part Image Part Image 1 Improved dv/dt capability; Fast switching; 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V; Low gate charge ( typical 18 nC); 100% avalanche tested; Low Crss ( typical 18 pF) Other FQD12N20TM 1 Download Model
Part Image Part Image 1 MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab Other FQD12N20LTM-F085 1 Download Model
Part Image Part Image 1 Low Gate Charge; Improved dV/dT capability; AECQ-101 Qualified; RoHS compliant Other FQD12P10TM-F085 1 Download Model
Part Image Part Image 1 Trans MOSFET N-CH 200V 9A Automotive 3-Pin(2+Tab) DPAK Other FQD12N20LTM-F085P 1 Download Model
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FQD12P10TM Rochester Electronics LLC
1 9.4A, 100V, 0.29ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 FQD12P10TM 0 Build or Request
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FQD12N20LTM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD12N20LTM 0 Build or Request
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FQD12N20TF Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD12N20TF 0 Build or Request
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FQD12P10TF Rochester Electronics LLC
1 9.4A, 100V, 0.29ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 FQD12P10TF 0 Build or Request
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FQD12P10TM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD12P10TM 0 Build or Request
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FQD12N20LTF Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD12N20LTF 0 Build or Request
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FQD12N20LTF Rochester Electronics LLC
1 9A, 200V, 0.32ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 FQD12N20LTF 0 Build or Request
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FQD12P10TF Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD12P10TF 0 Build or Request
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FQD12N20TF Rochester Electronics LLC
1 9A, 200V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 FQD12N20TF 0 Build or Request
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FQD12N20TM Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD12N20TM 0 Build or Request
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FQD12N20LTM_NL Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD12N20LTM_NL 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQD12N20LTM_F085 0 Build or Request
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FQD12N20L Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD12N20L 0 Build or Request
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FQD12P10 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 FQD12P10 0 Build or Request
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FQD12P10TM_AS004 Fairchild Semiconductor Corporation
1 POWER, FET FQD12P10TM_AS004 0 Build or Request
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FQD12P10TM_F085 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FQD12P10TM_F085 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FQD12P10TM_F085 0 Build or Request
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FQD12P10TF-NB82105 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9.4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET FQD12P10TF-NB82105 0 Build or Request
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FQD12N20 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 FQD12N20 0 Build or Request
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FQD12N20LTM_F085 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQD12N20LTM_F085 0 Build or Request
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