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FQD12N20TM - onsemi

Description: Improved dv/dt capability; Fast switching; 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V; Low gate charge ( typical 18 nC); 100% avalanche tested; Low Crss ( typical 18 pF)

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FQD12N20TM - onsemi PCB footprint - Other - Other - FQD12N20TM
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FQD12N20TM Details

  • Manufacturer Part Number:

    FQD12N20TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.28 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    55 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD12N20TM Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQD12N20TM is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) to fill any gaps between the device and the heat sink, and ensure the heat sink is properly mounted and secured.
  • The recommended gate drive voltage for the FQD12N20TM is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
  • To protect the FQD12N20TM from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in the circuit. Additionally, consider using a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) to protect the device from voltage spikes and surges.
  • For optimal performance and reliability, it's essential to follow good PCB layout practices when designing a circuit with the FQD12N20TM. Keep the power traces short and wide, use a solid ground plane, and minimize the loop area of the power circuit to reduce electromagnetic interference (EMI).

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FQD12N20TM Overview

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FQD12N20TM Alternates

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Part Image FQD12N20TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD10N20LTF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD12N20LTM_F085 onsemi

Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FQD12N20LTM_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD10N20LTM onsemi

Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

For a full list of alternate parts for FQD12N20TM, check out Findchips.com