FQD19N10TM - onsemi

Description: Low Crss ( Typ. 32pF); 100% avalanche tested; 15.6A, 100V, RDS(on) = 63mΩ(Max.) @VGS = 10 V, ID = 7.8A; Low gate charge ( Typ. 19nC)

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Image	Part Number	Model
	FQD19N10TM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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FQD19N10TM - onsemi

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