FQD19 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQD19N10LTM onsemi	1	15.6A, 100V, RDS(on) = 100mΩ(Max.) @VGS = 10 V, ID = 7.8A; Low gate charge ( Typ. 14nC); 100% avalanche tested; Low Crss ( Typ. 35pF)	Other	FQD19N10LTM	3D model available Symbol and footprint available 3	1 Download Model
	FQD19N10TF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD19N10TF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD19N10LTF Rochester Electronics LLC	1	15.6A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3		FQD19N10LTF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD19N10LTM Rochester Electronics LLC	1	15.6A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3		FQD19N10LTM	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQD19N10 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD19N10	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD19N10TM_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD19N10TM_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD19N10LTF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 15.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD19N10LTF	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD19N10L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 15.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD19N10L	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD19N10LTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 15.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD19N10LTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD19N10TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD19N10TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQD19N10TM onsemi	1	Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FQD19N10TM	3D model not available Symbol and footprint not available 0	0 Build or Request

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