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FQD2N60CTM - onsemi

Description: RoHS compliant; 1.9A, 600V, RDS(on) = 4.7Ω(Max.) @VGS = 10 V, ID = 0.95A; 100% avalanche tested; Low Crss ( Typ. 4.3pF); Low gate charge ( Typ. 8.5nC)

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FQD2N60CTM Details

  • Manufacturer Part Number:

    FQD2N60CTM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.3

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    1.9 A

  • Drain-source On Resistance-Max:

    4.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    44 W

  • Pulsed Drain Current-Max (IDM):

    7.6 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD2N60CTM Frequently Asked Questions (FAQs)

  • The recommended gate resistor value for FQD2N60CTM is typically in the range of 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.
  • To ensure proper cooling, make sure to provide adequate heat sinking, such as a heat sink or thermal pad, and ensure good thermal contact between the device and the heat sink. Additionally, consider the thermal resistance of the device and the maximum junction temperature.
  • The maximum allowed voltage transient for FQD2N60CTM is typically 80% of the maximum rated voltage, which is 600V for this device. However, it's recommended to consult the datasheet and application notes for specific guidance.
  • Yes, FQD2N60CTM is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the device is properly driven and cooled.
  • To protect the FQD2N60CTM from overvoltage and overcurrent, consider using a voltage clamp or surge protector, and implement overcurrent protection using a current sense resistor and a protection circuit.

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FQD2N60CTM Overview

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Part Image FQD2N60CTM Rochester Electronics LLC

1.9A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3

Part Image FQD2N60CTM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252